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Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.

Identifieur interne : 002544 ( Main/Exploration ); précédent : 002543; suivant : 002545

Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.

Auteurs : RBID : pubmed:17722944

English descriptors

Abstract

Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)B substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain inhomogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.

DOI: 10.1021/nl070888q
PubMed: 17722944

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Le document en format XML

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<div type="abstract" xml:lang="en">Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)B substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain inhomogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.</div>
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