Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
Identifieur interne : 002544 ( Main/Exploration ); précédent : 002543; suivant : 002545Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
Auteurs : RBID : pubmed:17722944English descriptors
- KwdEn :
- Arsenicals (chemistry), Computer Simulation, Crystallization (methods), Elasticity, Indium (chemistry), Macromolecular Substances (chemistry), Materials Testing, Models, Chemical, Models, Molecular, Molecular Conformation, Nanotechnology (methods), Nanotubes (chemistry), Nanotubes (ultrastructure), Particle Size, Phosphines (chemistry), Stress, Mechanical, Surface Properties, X-Ray Diffraction (methods).
- MESH :
- chemical , chemistry : Arsenicals, Indium, Macromolecular Substances, Phosphines.
- chemistry : Nanotubes.
- methods : Crystallization, Nanotechnology, X-Ray Diffraction.
- ultrastructure : Nanotubes.
- Computer Simulation, Elasticity, Materials Testing, Models, Chemical, Models, Molecular, Molecular Conformation, Particle Size, Stress, Mechanical, Surface Properties.
Abstract
Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)B substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain inhomogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.
DOI: 10.1021/nl070888q
PubMed: 17722944
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Le document en format XML
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<author><name sortKey="Eymery, Joel" uniqKey="Eymery J">Joël Eymery</name>
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<settlement type="city">Grenoble</settlement>
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<author><name sortKey="Rieutord, Francois" uniqKey="Rieutord F">François Rieutord</name>
</author>
<author><name sortKey="Favre Nicolin, Vincent" uniqKey="Favre Nicolin V">Vincent Favre-Nicolin</name>
</author>
<author><name sortKey="Robach, Odile" uniqKey="Robach O">Odile Robach</name>
</author>
<author><name sortKey="Niquet, Yann Michel" uniqKey="Niquet Y">Yann-Michel Niquet</name>
</author>
<author><name sortKey="Fr Berg, Linus" uniqKey="Fr Berg L">Linus Fröberg</name>
</author>
<author><name sortKey="M Rtensson, Thomas" uniqKey="M Rtensson T">Thomas Mårtensson</name>
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<author><name sortKey="Samuelson, Lars" uniqKey="Samuelson L">Lars Samuelson</name>
</author>
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<term>Computer Simulation</term>
<term>Crystallization (methods)</term>
<term>Elasticity</term>
<term>Indium (chemistry)</term>
<term>Macromolecular Substances (chemistry)</term>
<term>Materials Testing</term>
<term>Models, Chemical</term>
<term>Models, Molecular</term>
<term>Molecular Conformation</term>
<term>Nanotechnology (methods)</term>
<term>Nanotubes (chemistry)</term>
<term>Nanotubes (ultrastructure)</term>
<term>Particle Size</term>
<term>Phosphines (chemistry)</term>
<term>Stress, Mechanical</term>
<term>Surface Properties</term>
<term>X-Ray Diffraction (methods)</term>
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<term>Indium</term>
<term>Macromolecular Substances</term>
<term>Phosphines</term>
</keywords>
<keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanotubes</term>
</keywords>
<keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Crystallization</term>
<term>Nanotechnology</term>
<term>X-Ray Diffraction</term>
</keywords>
<keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanotubes</term>
</keywords>
<keywords scheme="MESH" xml:lang="en"><term>Computer Simulation</term>
<term>Elasticity</term>
<term>Materials Testing</term>
<term>Models, Chemical</term>
<term>Models, Molecular</term>
<term>Molecular Conformation</term>
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<front><div type="abstract" xml:lang="en">Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)B substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain inhomogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.</div>
</front>
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<Abstract><AbstractText>Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)B substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain inhomogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.</AbstractText>
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